Taught by Ryan Griffin, Department of Electronics
Monday & Wednesday 9:00 a.m. – 12:00 (May 4 – June 16, 2015)
- Survey of technology used in silicon VLSI integrated circuit fabrication.
- Crystal growth and crystal defects. Oxidation, diffusion, ion implantation and annealing, gettering, CVD, etching, materials for metallization and contacting, and photolithography.
- Structures and fabrication techniques required for submicron MOSFETs. Process and device simulation.